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Temperature dependence of chemical states and band alignments in ultrathin HfOxNy/Si gate stacks
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D: Applied Physics
  • 时间：2012.8.22
  • 页码：335103-335103
  • 相关项目：HfTiON/TaON叠层高k栅介质薄膜的制备及其在锗场效应晶体管中的应用探索
作者： Wang, X. J.|Liu, M.|Zhang, L. D.|
同期刊论文项目
HfTiON/TaON叠层高k栅介质薄膜的制备及其在锗场效应晶体管中的应用探索
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