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聚合物／SiO2混合波导2×2热光开关的制备与测试

ISSN号：1005-0086
期刊名称：《光电子．激光》
时间：0
分类：TN761[电子电信—电路与系统] TE357.46[石油与天然气工程—油气田开发工程]
作者机构：[1]State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University,Changehun 130012, China
相关基金：This work has been supported by the National Science Foundation Council of China （Nos.61107021, 61177027 and 61077041）, the Ministry of Education of China （Nos.20110061120052 and 20120061130008）, the China Postdoctoral Science Foundation Funded Project （Nos.20110491299 and 2012T50297）, and the Special Funds of Basic Science and Technology of Jilin University （Nos.201103076 and 200905005）.

作者：梁磊[1], 曲禄成[1], 张立钧[1], 郑传涛[1], 孙小强[1], 王菲[1], 张大明[1]

关键词：电光调制器, 聚合物, 干涉仪, 马赫, 性能, 微米, 电感耦合等离子体, 设计

中文摘要：

Based on poled guest-host electro-optic (EO) polymer DR1/SU-8, a Mach-Zehnder interferometer (MZI) EO modulator operated at 1.55 μm is proposed. For achieving high response speed and high EO modulation efficiency, both waveguide structure and electrode structure are especially optimized. The impedance match and less index mismatch are achieved. The final characteristic impedance of electrode is about 49.4 Ω, and the microwave index and the light-wave index are 1.5616 and 1.6006, respectively. The device is fabricated using wet-etching technique and inductively coupled plasma (ICP) etching technique, and its performance is measured at 1.55 μm. Experimental results show that when the applied voltage is tuned, the modulator can be changed from ON state to OFF state. The insertion loss at ON state is 12 dB and the extinction ratio between ON and OFF states is about 10 dB. The high response speed is in nano-second level for a square-wave signal. Therefore, the modulator possesses potential applications in high-speed optical networks on chip.

英文摘要：

Based on poled guest-host electro-optic （EO） polymer DR1/SU-8, a Mach-Zehnder interferometer （MZI） EO modulator operated at 1.55 um is proposed. For achieving high response speed and high EO modulation efficiency, both waveguide structure and electrode structure are especially optimized. The impedance match and less index mismatch are achieved. The final characteristic impedance of electrode is about 49.4 Ω, and the microwave index and the lightwave index are 1.5616 and 1.6006, respectively. The device is fabricated using wet-etching technique and inductively coupled plasma （ICP） etching technique, and its performance ismeasured at 1.55 pan, Experimental results show that when the applied voltage is tuned, the modulator can be changed from ON state to OFF state. The insertion loss at ON state is 12 dB and the extinction ratio between ON and OFF states is about 10 dB. The high response speed is in nanosecond level for a square-wave signal. Therefore, the modulator possesses potential applications in high-speed optical networks on chip.

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