中文摘要：

应用中频反应磁控溅射技术制备了Al2O3：CeCl3的非晶薄膜。Ce^3＋含量和薄膜的化学成分通过X射线散射能谱（EDS）测量。薄膜试样的晶体结构用X射线衍射分析。俄歇电子谱用于对薄膜材料的化学组分进行定性分析。薄膜的光致发光峰是在370nm到405nm范围内，它们来自于Ce^3＋离子的5d^1激发态向基态4P的两个劈裂能级的跃迁。发光强度强烈地依赖于薄膜中的掺杂浓度和沉积时的基片温度。薄膜发光来自于氯化铈分子中的发光中心，而不是其他、的掺杂Ce^3＋离子。随铈含量增加，光致发光峰向低能方向移动，可能与薄膜中存在氯元素有关。

英文摘要：

Aluminum oxide films doped with Ce were prepared by the medium frequency reactive magnetron sputtering technique. Ce3＋ content, the composition and the crystalline structure of the films were characterized by EDS, XRD and AES. The results show that the photoluminescence emission of these films shows peaks at the range of 374-405 nm which are associated with 5d to 4f transitions of Ce. The relative intensities of these peaks are strongly dependent on the amount of Ce incorporated in the films, and the substrate temperature during deposition. It is proposed that the light emission observed is generated by the luminescent center associated with cerium chloride molecular rather than the doped cerium ions （Ce3＋）. With the increase of Ce concentration, the photoluminescence peaks shift to lower energy, it would be associated with the existence of element chrorine in the films.