中文摘要：

用中频反应磁控溅射技术制备了Ak2O3：Ce^3＋的非晶薄膜。XPS监测显示，薄膜中有Ce^3＋生成。这些薄膜的光致发光峰是在374nm附近，它来自于Ce^3＋离子的5d^1激发态向基态4f^1的两个劈裂能级的跃迁。发光强度强烈地依赖于薄膜的掺杂浓度，但发光峰位置不随掺杂浓度而变化。Ce^3＋含量和薄膜的化学成分是通过X射线散射能谱（EDS）测量的。薄膜试样的晶体结构应用X射线衍射分析。俄歇电子谱用于对薄膜材料的化学组分进行定性分析。发射纯蓝光的Al2O3：Ce^3＋非晶薄膜在平板显示等领域有着广泛的潜在应用前景。

英文摘要：

Amorphous aluminum oxide thin films doped with cerium were deposited by the MF reactive magnetron sputtering technique. Some Ce^3＋ appeared in the Al2O3：Ce thin films according to XPS measurement. The photoluminescence emission from these films showed peaks at around 374 which are associated with 5d to 4f transitions of Ce^3＋ ions. The intensities of the peaks are strongly dependent on the cerium doped concentrations in the films. The presence of cerium as well as the stoichiometry of these films were determined by energy dispersive x-ray spectroscope （EDS） measurements. It is proposed that the light emission generated by luminescent center was associated with trivalence ionic cerium impurities. The crystalline structure of the sample was analysed by X-ray diffractometry （XRD）. Auger electron spectroscopy was used to estimate the stoichiometry of the films. This luminescence feature is of significance for display techniques requiring a purer blue emission.