中文摘要：

应用中频反应磁控溅射技术制备了Al2O3：Ce^3＋的非晶薄膜.X射线光电子谱（XPS）检测显示薄膜中有Ce^3＋生成.这些薄膜的光致发光峰是在374 nm附近,它来自于Ce^3＋离子的5d1激发态向基态4f1的两个劈裂能级的跃迁.发光强度强烈地依赖于薄膜的掺杂浓度,但发光峰位置不随掺杂浓度而变化.Ce^3＋含量和薄膜的化学成分是通过X射线散射能谱（EDS）测量的.薄膜试样的晶体结构应用X射线衍射分析.俄歇电子谱用于对薄膜材料的化学组分进行定性分析.发射蓝紫色光的Al2O3：Ce^3＋非晶薄膜在平板显示等领域有着广泛的潜在应用前景.

英文摘要：

Amorphous aluminum oxide thin films doped with cerium have been deposited by middle frequency reactive magnetron sputtering. There exist Ce^3 ＋ ions in the Al2O3 ： Ce thin films as shown by XPS measurement. The photoluminescence emission from these films show peaks around 374 nm which are associated with 5d to 4f transitions of Ce^3＋ ions. The intensity of these peaks is strongly dependent on the amount of cerium incorporated in the films. The presence of cerium as well as the stoichiometry of these films have been determined by energy dispersive X-ray spectroscopy （EDS） measurements. It is proposed that the light emission observed is generated by luminescence centers associated with trivalent ionic cerium impurities. The crystalline structure of the sample was analysed by X-ray diffraction （XRD）. Auger electron spectroscopy has been used to estimate the stoichiometry of the films. This luminescence feature is advantageous for display techniques which require a purer blue emission.