位置：成果数据库 > 期刊 > 期刊详情页
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nan
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：1-5
  • 相关项目：氮化镓基激光器的关键科学与技术问题研究
作者： Zhu, Jihong|Wang, Liangji|Zhang, Shuming|Wang, Hui|Zhao, Degang|Zhu, Jianjun|Liu, Zongshun|Jiang, Desheng|Yang, Hui|
同期刊论文项目
氮化镓基激光器的关键科学与技术问题研究
期刊论文 71 专利 14
同项目期刊论文
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spe
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet
GaN基激光器的特性
The influence of growth temperature and input V/III ratio on the initial nucleation and material pro
Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple q
Quadratic electro-optic effect in GaN-based materials
Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
器件参数对GaN基n^＋-GaN/i-AlxGa1-xN/n^＋-GaN结构紫外和红外双色探测器中紫外响应的影响
高阻氮化镓外延层的异常光吸收
金属有机化学气相沉积法生长条件对AlN薄膜面内晶粒尺寸的影响
Time delay in InGaN multiple quantum well laser diodes at room temperature
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si （111） substrate with AlGaN interlayer
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition
Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Simulation of the light extraction efficiency of nanostructure light-emitting diodes
Thermal analysis of GaN laser diodes in a package structure
Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes