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The influence of growth temperature and input V/III ratio on the initial nucleation and material pro
ISSN号:0268-1242
期刊名称:Semiconductor Science and Technology
时间:0
页码:1-5
相关项目:氮化镓基激光器的关键科学与技术问题研究
作者:
Wang, H.|Jiang, D. S.|Zhu, J. J.|Zhao, D. G.|Liu, Z. S.|Wang, Y. T.|Zhang, S. M.|Yang, H.|
同期刊论文项目
氮化镓基激光器的关键科学与技术问题研究
期刊论文 71
专利 14
同项目期刊论文
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spe
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nan
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet
GaN基激光器的特性
Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple q
Quadratic electro-optic effect in GaN-based materials
Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
器件参数对GaN基n^+-GaN/i-AlxGa1-xN/n^+-GaN结构紫外和红外双色探测器中紫外响应的影响
高阻氮化镓外延层的异常光吸收
金属有机化学气相沉积法生长条件对AlN薄膜面内晶粒尺寸的影响
Time delay in InGaN multiple quantum well laser diodes at room temperature
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition
Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Simulation of the light extraction efficiency of nanostructure light-emitting diodes
Thermal analysis of GaN laser diodes in a package structure
Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes