中文摘要：

二硫化钼（MoS2）是一种具有类似石墨烯结构和性能的新型二维层状化合物,近年来因其独特的物理化学特性而成为研究热点。采用化学气相沉积法（CVD）,以掺杂银的MoS2饱和溶液为原料,氩气为输运气体,在p-Si衬底上制备MoS2薄膜,并研究了银掺杂对MoS2薄膜的表面形貌、晶体结构、光吸收特性以及电学特性的影响。研究发现,银掺杂并未改变MoS2薄膜的晶体结构,而使MoS2薄膜的结晶度更好;银掺杂的MoS2薄膜反射率降低,光吸收增强,进而可以提高器件的光电转换效率。另外,银掺杂的MoS2薄膜表面更均匀平整,同时具有更良好的电学特性,其电子迁移率高达1.154×104 cm2·V-1·s-1,可用于制造一些晶体管和集成电路等半导体器件。

英文摘要：

Molybdenum disulfide （MoS2） is a new two-dimensional layered compound with the similar structure and property of the graphene, and is becoming research focus because of its unique physical and chemical properties in recent years. Using the chemical vapor deposition （CVD） method, MoS2 thin films were deposited on p-Si substrates with the Ag-doped MoS2 saturated solution as a raw material and argon （At） gas as transport gas. The influences of the silver doping on the surface topography, crystalline structure, light absorption property and electrical property of MoS2 thin films were studied. The study shows that the silver doping does not change the crystal structure of MoS2 films, but makes the crystallinity of MoS2 films better. The optical reflectivity of the Ag-doped MoS2 films is reduced, then the light absorption is enhanced, and the photoelectric conversion efficiency of the device is improved. In addition, the surfaces of Ag- doped MoS2 films are more uniform and flat, and its electrical property is better. The carrier mobility of Ag-doped MoS2 films is up to 1. 154 × 104 cm2 V-1 s-1, which can be used to fabricate transistors and integrated circuits.