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Study of the Electrical Properties of Monolayer MoS2 Semiconductor
  • ISSN号：1022-6680
  • 期刊名称：Advanced Materials Research
  • 时间：0
  • 页码：-
  • 相关项目：稀磁锗(Ge)介观量子环的光电磁特性研究
作者： Xiying Ma|
同期刊论文项目
稀磁锗(Ge)介观量子环的光电磁特性研究
期刊论文 34 会议论文 2 专利 2
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