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中文摘要：
采用CSMC（华润上华）0.5μmCMOS工艺设计和制备了正向偏置和反向偏置情况下发出两种不同种类光的Si-LED。在室温条件下,对器件进行了初步测试,正向导通电压为0.7V,反向击穿电压为7.5V。器件的结构采用P-base层与n^＋区交叠,形成Si-pn结LED。观察了Si-LED发光显微照片及实际器件的版图,并对器件的发光进行了光谱特性测量。Si-LED在正向偏置时,发出红外光,其发光峰值在1125nm;Si-LED在反向偏置时,发出可见光,其发光峰值在725nm。
英文摘要：
In this paper, a Si-LED was designed and manufactured with CSMC 0.5/xm CMOS Technology which could emit two different kinds of light at both forward bias mode and reverse bias mode. At room temperature, the characteristics of the device were primarily tested. It could be turned on at forward bias of 0.7 V and at reverse bias of 7.5 V. The device structure was adopted with the layer P-base and n^＋, and the two overlaps forming Si-pn junction LED. The Si LED＇s emitting micrographs and real layouts were captured by an Olympus IC microscope, and emission spectra of Si LED was presented. At the forward bias mode, this device emitted infrared light and the emitting peak value was located at 1 125 nm. At the reverse bias mode, this device emitted visible light, its emitting peak value was about at 725 nm.
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