基于标准互补金属氧化物半导体(CMOS)工艺流程, 设计了p+/N-well和n+/p-sub两类结构的太阳能电池单元,通过分 析影响电池性能参数的主要因素,设计、制备出4种不同单元尺寸的电池结构。测试结果表 明,在标 准测试条件下,面积50μm的单元结 构具有最优的性能参数,其开路电压和短路电流分别为0.49V 和76.61μA/mm2,最大输出功率达29.44 μW/mm2,光电转换效率为2.94%。基于优化的器件结构,将两 类不同结构的电池单元串联实现了高压输出的太阳能电池,电池的输出电压为0.95V,短路电流和最大输出功率分别为13μA/mm2和10.5μW/mm2。
Based on the standard CMOS process,two types of solar cells are desig ned.They are a PN junction photodiode (PD) consisting of an N-well and a p+ source/drain (S/D) region and a PD consisting of a p-sub and n+ S/D region.By analyzing the critical factors affecting the device performanc e,the solar cells with four different geometries are designed and fabricated using standard CMOS process.Th e experimental results demonstrate that the solar cell with an area of 50μm×50μm has the optimal p erformance.The maximum output power obtained at the standard test conditions is 29.44μW/mm2,and the short -circuit current and open-circuit voltage are 76.61μA/mm2and 0.49V,respectively.A conversion efficiency of 2.94% for p+/N-well solar cell is achieved.Based on the optimal structure parameters,a tandem solar cell connect ed by electrical short-circuit with a p+/N-well PD and an n+/p-sub PD is implemented in CSMC 0.18μm CMOS pr ocess.The solar cell generates a high-voltage output of 0.95V,and the short-circuit current and maximum output power of the solar cell are 13μA/mm2and 10.5μW/mm2,respectively.The tandem solar cell formed in this paper has the potential for direct applications in wireless autonomous mic rosystems.