中文摘要：

基于带隙基准的原理，采用0．6μm、N阱CMOS工艺，文章设计了一种工作在亚阁值区的用于锂商子和锂聚合物电池充电保护芯片的低功耗基准电路。Hspice仿真结果表明：基准电压为1．068V．电源电压由1．8V到8V变化，电路最大消耗电流小于0．15μA；温度由-40℃到80℃化，其温度系数约为±10ppm/℃。整个充电保护芯片测试结果，其功耗小于0．6μW。

英文摘要：

Based on the principle of the bandgap reference, this paper designs a referenced circuit with low-power consumption working on the subthreshold region, which is used in a Li-lon and Li-polymer battery charge protection monolithic. With 0.6μm, N well CMOS technology, Hspice simulation shows that this circuit can operate with temperature coefficient ±10ppm/℃ （ambient temperature -40℃～80℃ ）, the maximum consumptive current less than 0.15μA（power 1.8V~8V）, when the referenced voltage is 1.068V. The whole charge protection IC＇s silicon result shows that the power consumption is less than 0.6μW.