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Effective mass of the two-dime
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  • 相关项目：半导体异质结构（包括ＳＯＩ、ＳＯＳ材料）
作者： Tang N, Shen B*, Wang MJ, et a
同期刊论文项目
半导体异质结构（包括ＳＯＩ、ＳＯＳ材料）
期刊论文 65 会议论文 8 获奖 2
同项目期刊论文
Study of two-dimensional elect
Infrared studies of GaN1-xPx t
Comment on "Spin splitting in
Photogalvanic effects for inte
Scattering times in AlGaN/GaN
High temperature dependence of
Influence of AlGaN/GaN interfa
Vertical conductivity of p-Alx
Comment on "Piezoelectric effe
Influence of polarization-indu
Anticrossing gap between pairs
Barrier enchancement effect of
Morphology of threading disloc
Temperature dependence of stra
Effect of long anneals on the
Mosaic structure evolution in
Enhancement and anisotropy of
Observation of inversion behav
Beating patterns in the oscill
Surface states in the AlxGa1-x
Microstructures and strain rel
Anti-weak localization of the
Origin of split peaks in the o
Temperature-dependent strain r
Improved transport properties
Room-temperature spin-oriented
Intersubband transitions in as
The weak anti localization and
Weak anti-localization of the
Spin-dependent photocurrent in
Influence of the illumination
Circular photogalvanic effect
Influences of laser lift-off p
极化电场对AlxGa（1-x）N／GaN双量子阱中子带间跃迁的光学性质的影响
Al组分对AlxGa1-xN／GaN异质结构中二维电子气输运性质的影响
高Al组分AlxGa1-xN薄膜的弹性-塑性力学性质
Al0.22Ga0.78N/GaN 二维电子气中的弱局域和反弱局域效应
表面钝化前后Al0．22Ga0．78N／GaN异质结势垒层应变的高温特性
AlGaN/GaN异质结构中二维电子气的高温输运性质
AlxGa1-x N／GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响
成核层退火压力对形成高阻GaN的作用
GaN和AlxGa1-xN/CaN异质结的高温性质