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Origin of split peaks in the o
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  • 相关项目：半导体异质结构（包括ＳＯＩ、ＳＯＳ材料）
作者： Tang N, Shen B*, Han K, et al.
同期刊论文项目
半导体异质结构（包括ＳＯＩ、ＳＯＳ材料）
期刊论文 65 会议论文 8 获奖 2
同项目期刊论文
Study of two-dimensional elect
Infrared studies of GaN1-xPx t
Comment on "Spin splitting in
Photogalvanic effects for inte
Scattering times in AlGaN/GaN
High temperature dependence of
Influence of AlGaN/GaN interfa
Vertical conductivity of p-Alx
Comment on "Piezoelectric effe
Influence of polarization-indu
Anticrossing gap between pairs
Barrier enchancement effect of
Morphology of threading disloc
Temperature dependence of stra
Effective mass of the two-dime
Effect of long anneals on the
Mosaic structure evolution in
Enhancement and anisotropy of
Observation of inversion behav
Beating patterns in the oscill
Surface states in the AlxGa1-x
Microstructures and strain rel
Anti-weak localization of the
Temperature-dependent strain r
Improved transport properties
Room-temperature spin-oriented
Intersubband transitions in as
The weak anti localization and
Weak anti-localization of the
Spin-dependent photocurrent in
Influence of the illumination
Circular photogalvanic effect
Influences of laser lift-off p
极化电场对AlxGa（1-x）N／GaN双量子阱中子带间跃迁的光学性质的影响
Al组分对AlxGa1-xN／GaN异质结构中二维电子气输运性质的影响
高Al组分AlxGa1-xN薄膜的弹性-塑性力学性质
Al0.22Ga0.78N/GaN 二维电子气中的弱局域和反弱局域效应
表面钝化前后Al0．22Ga0．78N／GaN异质结势垒层应变的高温特性
AlGaN/GaN异质结构中二维电子气的高温输运性质
AlxGa1-x N／GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响
成核层退火压力对形成高阻GaN的作用
GaN和AlxGa1-xN/CaN异质结的高温性质