欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
用自洽计算的方法研究了极化电场对AlxGa（1-x）N／GaN双量子阱中子带间跃迁的光学性质和电子分布的影响．发现极化场会导致电压降的出现，从而使得结构对称的AlxGa（1-x）N／GaN双量子阱具有不对称的导带和价带．极化效应还会使奇数序和偶数序的于带之间发生很大的Stark平移，从而使第一奇数序和第二偶数序子带之间的跃迁波长变短，这将有利于实现工作在通信窗口的光电子器件．同时，由于导带分布的不对称性，电子分布也不对称，从而会影响吸收系数．
英文摘要：
The influence of polarization-induced electric fields on the electron distribution and the optical properties of intersubband transitions （ISBT） in AlxGa（1-x）N/GaN coupled double quantum wells （DQWs） is investigated by self-consistent calculation. It is found that the polarization-induced potential drop leads to an asymmetric potential profile of AlxGa（1-x）N/GaN DQWs even though the two wells have the same width and depth. The polarization effects result in a very large Stark shift between the odd and even order subbands,thus shortening the wavelength of the ISBT between the first odd order and the second even order （1odd-2 ） subbands. Meanwhile, the electron distribution becomes asymmetric due to the polarization effects, and the absorption coefficient of the 1odd-2 ISBT decreases with increasing polarization field discontinuity.
同期刊论文项目
同项目期刊论文
期刊信息
位置：