中文摘要：

介绍了一种基于天线优化的GaN／AlGaN高电子迁移率晶体管（HEMT）的高灵敏度室温太赫兹探测器。在太赫兹波辐射下，太赫兹天线可以高效收集太赫兹波的能量进而提高探测器的性能指标。利用有限时域差分（FDTD）法对太赫兹天线的特征尺寸（源、漏极天线之间的间距L。以及栅极天线的栅长Lg）进行了优化研究。研究结果表明当Lg一定时，探测器的响应度随着L。的减小而增大，并从实验上制备出了响应度为9．45×10^2V／W的室温GaN／AlGaN HEMT太赫兹探测器。对优化后的器件进行了1×9线阵列探测器的制备和测试，探测器的电学特性一致性较好，响应度仅有约10％的误差。

英文摘要：

A high-sensitivity room-temperature GaN/A1GaN high electron mobility transistor （HEMT） terahertz detector based on the optimized antenna was introduced. In terahertz wave ra- diation, the terahertz antenna can efficiently collect the energy of terahertz wave to improve the performance of the detector. The feature sizes of the terahertz antenna （Lw is the gap between the source antenna and drain antenna, and Lg is the gate length of the gate antenna） were optimized by the finite difference time domain （FDTD） method. The results show that response of the de- tector increases with the decrease of Lw when Lg is a certain value. In the experiment, a room-temperature A1GaN/GaN HEMT terahertz detector with the responsivity of 9.45 × 10^2 V/W was fabricated. The 1×9 linear array detectors were fabricated and tested by using the optimized de- vices. The electrical characteristics consistency of the detectors is better, and the responsivity er- ror is only about 10%.