欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au (15 nm/85 nm/20 nm/95 nm) contacts on n-Al0.4Ga0.6 N. Contacts annealed at 700C and higher temperatures show Ohmic behaviour. Annealing at 800 C produces the lowest contact resistance. Samples annealed at 800C have been analysed by using cross-sectional transmission electron microscopy and an energy dispersive x-ray spectrum. Limited reaction depths are observed between V-based contacts and n-AlGaN. The VN grains are found to form in the contact layer of the annealed samples,which can be considered as the key to the successful formation of Ohmic contact. The contact layer adjacent to AlGaN material consists of V-Al-Au-N,AlN and AlAu alloys.
英文摘要：
This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au （15 nm/85 nm/20 nm/95 nm） contacts on n-A10.4Ga0.6N. Contacts annealed at 700 ℃ and higher temperatures show Ohmic behaviour. Annealing at 800 ℃ produces the lowest contact resistance. Samples annealed at 800 ℃have been analysed by using cross-sectional transmission electron microscopy and an energy dispersive x-ray spectrum. Limited reaction depths are observed between V-based contacts and n-AlGaN. The VN grains are found to form in the contact layer of the annealed samples, which can be considered as the key to the successful formation of Ohmic contact. The contact layer adjacent to AlGaN material consists of V Al-Au-N, AlN and AlAu alloys.
同期刊论文项目
同项目期刊论文
Direct observation of room-temperature ferromagnetism of single-phase Ga0.962Mn0.038N by magnetic fo
Influence of Mn-doping on densities of screw- and edge-type threading dislocations in Ga1-xMnxN grow
Abnormal Shubnikov–de Haas oscillations of the two-dimensional electron gas in AlxGa1?xN/GaN heteros
Transmission eletron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on
Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on (NH4)2S-x treated
Influence of the illumination on the subband structure and occupation in AlxGa1?xN/GaN heterostructu
Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N/GaN heterostructures wi
Self-Powered, Ultrafast, Visible-Blind UV Detection and Optical Logical Operation based on ZnO/GaN N
Influence of polarization induced electric fields on the wavelength and the refractive index of inte
Influence of applied electric field on the absorption coefficient and subband distances in asymmetri
Optimization of a solar-blind and middle infrared two-color photodetector using GaN-used bulk materi
Sueface light extraction mapping from two-dimensional array of 12-fold photonic quasicrystal on curr
Focused ion beam etched nitride/air DBR as cavity mirror facets of violet InGaN/GaN multi-quantum we
Effects of transverse mode coupling and optical confinement fact on gallium-nitride based laser diod
The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage of n-GaN using Cl2
Mosaic structure evolution in GaN films with annealing time growth by metalorganic chemical vapour d
Room temperature ferromagnetism of GaN:Mn thin films grown by low-pressure metal-organic chemical va
Influence of Mn-doping on densities of crew- and edge-type threading dislocation in GaMnN grown by M
Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organi
Improvement of light extraction from patterned polymer encapsulated GaN-based filp-chip light-emitti
Spatial mapping on surface light extraction from 2D photonic quasicrystals patterned GaN-based light
Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selecyive area growth GaN by m
Improvement of surface light extraction from filp-chip GaN-based LED by embossing of thermosetting p
Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer ep
Polarization of edge emission from III-nitride light emitting diodes
of emission wavelength from 395
期刊信息
位置：