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中文摘要：
测量了GaN基大功率倒装焊蓝光发光二极管（LED）在不同温度、不同老化阶段的电流-电压（I-V）特性曲线。结果表明，相对理想情形，特性曲线的反向偏压区漏电因深能级隧穿偏大；正向小偏压下因沿着位错汇聚金属产生漏电流；产生-复合电流区和扩散电流区因多量子阱限制而理想因子偏大；由于有源区低掺杂，在10A／cm^2就开始形成大注入区；在大电流下也因为串联电阻分压而形成串联电阻区。扩散电流区的温度系数和肖克菜方程导出的数值最接近，可用来测量结温。老化过程中反向漏电流增加，是因为有了更多被激活的深能级；随着老化正向漏电增加的速度变慢，是由于位错逐渐被汇集的金属填满。
英文摘要：
Current-voltage （I-V） characteristics of GaN-based high power flip-chip blue LEDs were measured at different temperatures and different aging stages. It is found that in the backward voltage segment of the I-V curve the leakage current is larger because of deep-levelassistant tunneling; under little forward voltage metal gathers along with the dislocations thus leads to leakage current; in the generation-recombination and diffusion current segments the restriction from MQWs leads to larger ideal factor; low impurity level in MQWs leads to large injection at 10 A/cm^2 ; at large current there are series resistance segment. In the diffusion current segment the temperature coefficient is the closest to that in the Shocley theory, and this segment can be used to measure junction temperature. Aging can lead to increase backward leakage current, which is because more activated deep-level centers are generated; the increase of forward leakage current becomes lower, which is because of gathered metal full filled with the dislocations.
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