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Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited hig
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013.12.23
  • 页码：-
  • 相关项目：分子层淀积量子阱有机薄膜晶体管的基础研究
作者： Zhou, Peng|Wang, Peng-Fei|Zhang, David Wei|Xiao, Fei|
同期刊论文项目
分子层淀积量子阱有机薄膜晶体管的基础研究
期刊论文 47
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