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GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric
  • ISSN号：1099-0062
  • 期刊名称：Electrochemical and Solid-State Letters
  • 时间：2012
  • 页码：51-54
  • 相关项目：分子层淀积量子阱有机薄膜晶体管的基础研究
作者： Xu, Min|Gu, Jiangjiang|Zhang, David Wei|Ye, Peide D.|
同期刊论文项目
分子层淀积量子阱有机薄膜晶体管的基础研究
期刊论文 47
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