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Resistive switching properties of plasma enhanced-ALD La(2)O(3) for novel nonvolatile memory applica
  • ISSN号：0734-2101
  • 期刊名称：Journal of Vacuum Science and Technology A
  • 时间：2012.1
  • 页码：01A148-
  • 相关项目：分子层淀积量子阱有机薄膜晶体管的基础研究
作者： Zhou, Peng|Lu, Hong-Liang|Ding, Shi-Jin|Zhang, David Wei|
同期刊论文项目
分子层淀积量子阱有机薄膜晶体管的基础研究
期刊论文 47
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