位置：成果数据库 > 期刊 > 期刊详情页
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2014.4.21
  • 页码：-
  • 相关项目：分子层淀积量子阱有机薄膜晶体管的基础研究
作者： Wang, Peng-Fei|Sun, Qing-Qing|Ding, Shi-Jin|Zhang, David Wei|
同期刊论文项目
分子层淀积量子阱有机薄膜晶体管的基础研究
期刊论文 47
同项目期刊论文
GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric
Resistive switching properties of plasma enhanced-ALD La(2)O(3) for novel nonvolatile memory applica
"Zero" Drain-Current Drift of Inversion-Mode NMOSFET on InP(111)A Surface
High-performance ultralow dielectric constant carbon-bridged mesoporous organosilica films for advan
Influence of HfAlO composition on memory effects of metal-oxide-semiconductor capacitors with Al2O3/
Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)(3) and O-2 prec
Atomic scale investigations of the gate controlled tunneling effect in graphyne nanoribbon
Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy
Ultra-shallow junctions formed using microwave annealing
Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition
Nitridation of atomic-layer-deposited HfO2/Al2O3 stacks by NH3 annealing
Estimation of film-electrode contact resistance and domain switching time from ferroelectric polariz
Nonlinear antiferroelectric-like capacitance-voltage curves in ferroelectric BiFeO3 thin films
Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors
Direct Deposition of Uniform High-kappa Dielectrics on Graphene
Direct observation of the work function evolution of graphene-two-dimensional metal contacts
Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al2O
Reactively sputtered HfO2 and Ba(Zr0.2Ti0.8)O-3-HfO2 dielectrics for metal-insulator-metal capacitor
Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited hig