中文摘要：

采用射频磁控溅射法制备了ZnO/TiO2/Si薄膜,研究了TiO2缓冲层的不同退火气氛对ZnO薄膜的影响.利用X射线衍射分析（XRD）、紫外-可见分光光度计和荧光分光光度计等技术表征了ZnO/TiO2/Si薄膜的微结构和光学特性.XRD结果表明：沉积在经过O2退火缓冲层上的ZnO薄膜具有最好的c轴择优取向;透射吸收谱显示所有ZnO薄膜在可见光区域的平均透过率超过90%;引入未退火缓冲层后薄膜的光学带隙值增大,而缓冲层在真空、氧气进行退火后薄膜的光学带隙值均减小.薄膜的光致发光谱显示：所有样品出现了位于400nm,450nm和530nm的紫光峰、蓝光峰和绿光峰,并对各发光峰的来源进行了探讨.

英文摘要：

ZnO films using TiO2 buffer layers were deposited on Si substrate by radio frequency（RF） reactive magnetron sputtering.Buffer layers were annealed in vacuum and oxygen,respectively.The effect of the ambient gas during the thermal annealing after the growth of TiO2 buffer layers on the microstructure and optical properties of ZnO films were characterized by X-ray diffraction（XRD）,ultraviolet-visible spectrophotometer and fluorescence spectrophotometer.All films have an average optical transparency over 90% in the visible range,meanwhile the optical band gaps first increases whenTiO2 buffer layer was introduced,then decreases as buffer layer was annealed in vacuum and oxygen,respectively.Peaks located at 400 nm,450 nm and 530 nm have been observed from all samples.The origin of these emissions is discussed.