中文摘要：

采用射频（RF）反应磁控溅射技术在Si衬底上分别制备了具有（100）方向生长的ZnO薄膜和Ti掺杂ZnO薄膜（ZnO∶Ti）.利用X射线衍射（XRD）和光致荧光发光（PL）表征技术,研究了不同Ti掺杂浓度对ZnO薄膜微观结构和光学性能的影响.结果显示,Ti掺杂前后ZnO薄膜都具有六角纤锌矿结构,同时均表现出沿（100）方向的择优生长特性;掺入2%Ti元素后薄膜的织构系数Tc（100）明显增加,表明Ti的掺入对ZnO薄膜的结晶取向程度有一定影响.与未掺杂的ZnO薄膜相比,ZnO∶Ti薄膜的衍射峰发生宽化且峰强减小,薄膜的结晶质量下降.改变Ti的掺杂量,发现Si衬底上制备的薄膜发光强度和发光峰位随掺杂浓度发生相应的改变.

英文摘要：

The pure ZnO film and Ti-doped ZnO（ZnO∶Ti） thin films with（100） preferred orientation are deposited successfully on silicon（Si） substrate using radio frequency（RF）reactive magnetron sputtering technique.The effect of different Ti doping concentration on the microstructural and optical properties of ZnO∶Ti thin films are investigated by X-ray diffraction（XRD） and photoluminescence（PL）.The results show that all of the films have hexagonal wurtzite type structure with obvious（100） preferential orientation,and the thin film texture coefficient Tc（100） increase sharply with adding 2% of Ti doping,which indicates that Ti impurities can influence crystallinzation orientation degree of ZnO films.Compare with pure ZnO thin films,the full width at half-maximum（FWHM） of（100） diffraction peak of ZnO∶Ti thin films widen and the intensity of（100） diffraction peak decrease,and the quality of crystallization of thin films decline.With different Ti doping concentration on ZnO films,its luminescence correspondingly changes,not only intensity changes,but peak positions have been moved on the Si substrates.