中文摘要：

采用磁控溅射法（RF）在玻璃基底上制备了未掺杂和不同Cu掺杂浓度的ZnO薄膜．使用X射线衍射仪（XRD）、原子力显微镜（AFM）、扫描电子显微镜（SEM）分别对样品的形貌进行了表征，并对Zn0薄膜进行了应力分析．结果显示：所有样品都呈现出（002）衍射峰，有较好的C轴择优取向；所有样品出现有3个发光峰，分别对应于400nm（3．14eV，紫光），444nm（2．78eV，蓝光），484nm（2．56eV，蓝光）．紫峰的存在与激子的存在有极大关系，而蓝光发射主要是由于电子从导带上向锌空位形成的浅受主能级上的跃迁．随着Cu掺杂量的增加．薄膜的带隙宽度Eg随之减小，样品光学带隙值由3．26eV逐渐减小为2．99eV．实验中还发现，随着Cu掺杂量增加，薄膜的透射率也随之减小．

英文摘要：

ZnO films doped with different Cu concentration are prepared on glass substrate by RF magnetron sputtering system. The structural and morphology of the samples are investigated by X- ray diffraction（XRD）, atomic force microscopy（AFM）and scanning electron microscopy（SEM）, and the stress in the ZnO thin films is analyzed. The results show that all the samples have a strong diffraetion peak and high preferential orientation in the （002）crystallographic direction. Three peaks have been observed from the PL spectra of the all samples, 395 nm（3.14 eV,violet）, 446 nm（2.78 eV,blue）and 488 nm（2.54 eV,blue）. It is concluded that the violet peak may correspond to the exciton emission, the blue emission corresponds to the electron transition from the bottom of the conduction band to the acceptor level of zinc vacancy; the optical test shows that the optical band gap Eg are decreased within the increase of Cu doped in ZnO, the band gap decrease from 3.26 eV to 2.99 eV gradually. It is also found that the transmission rate is decreased rapidly when the Cu concentration is increase.