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Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperatur
  • ISSN号：0169-4332
  • 期刊名称：Applied Surface Science
  • 时间：0
  • 页码：2660-2664
  • 语言：英文
  • 相关项目：SOI基高速、窄谱带响应长波长Ge光电探测器研究
作者： Lai, Hongkai|Li, Cheng|Yu, Jinzhong|Cai, Zhimeng|Chen, Songyan|Zhou, Zhiwen|
同期刊论文项目
SOI基高速、窄谱带响应长波长Ge光电探测器研究
期刊论文 33 会议论文 3 专利 1
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