位置：成果数据库 > 期刊 > 期刊详情页
Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：5433-5438
  • 语言：英文
  • 相关项目：SOI基高速、窄谱带响应长波长Ge光电探测器研究
作者： Suemasu, T.|Chen, Songyan|Lai, Hongkai|Hasegawa, F.|Li, Cheng|
同期刊论文项目
SOI基高速、窄谱带响应长波长Ge光电探测器研究
期刊论文 33 会议论文 3 专利 1
同项目期刊论文
红外微腔探测器中金属支撑柱的制备工艺研究
Strain relaxation in SiGe layer during wet oxidation process
Experimental evidence of oxidant-diffusion-limited oxidation of SiGe alloys
Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silico
Strain Relaxation in Ultrathin SGOI Substrates Fabricated by Multistep Ge Condensation Method
Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate
Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperatur
Ge组分对SiGe HBT直流特性的影响
Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光
Si基Ge波导光电探测器的制备和特性研究
激光全息法制备二维硅基图形衬底
硅基外延锗金属-半导体-金属光电探测器及其特性分析
太赫兹Si／SiGe量子级联激光器波导模拟
GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
Ge组分对SiGeHBT直流特性的影响
Ge／Si（100）量子点生长与形态分布的研究
U型凹槽电极硅MSM结构光电探测器的研制
真空高温脱O引起Si图形衬底形态变化的研究
UHV/CVD法生长硅基低位错密度厚锗外延层
干法氧化制备SiGe弛豫缓冲层及其表征
Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells