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Strain relaxation in SiGe layer during wet oxidation process
  • ISSN号：0169-4332
  • 期刊名称：Applied Surface Science
  • 时间：0
  • 页码：3701-3705
  • 语言：英文
  • 相关项目：SOI基高速、窄谱带响应长波长Ge光电探测器研究
作者： Cai, Kunhuang|Li, Cheng|Kang, Junyong|Chen, Songyan|Zhang, Yong|Lai, Hongkai|
同期刊论文项目
SOI基高速、窄谱带响应长波长Ge光电探测器研究
期刊论文 33 会议论文 3 专利 1
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