中文摘要：

Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10 15 ions/cm 2 and 10 16 ions/cm 2 . The doped c-BN thin films are then annealed at a temperature between 400°C and 800 C. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.

英文摘要：

Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400℃ and 800℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.