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中文摘要：
用电子束蒸发法制备氮化硼薄膜，分别研究束流大小和蒸发时间长短对薄膜质量的影响，薄膜以红外吸收光谱标识。实验结果表明，束流大小和蒸发时间长短对薄膜质量都有影响，经过900℃氮气保护退火后，都得到了高立方相含量的氮化硼薄膜。
英文摘要：
Boron nitride thin films were deposited by electron beam evaporation. The electron beam flux and deposition time were changed independently. Then films were annealed at 900℃ for 1 hour under N2 protection. The Boron nitride films were characterized by IR Spectra. The boron nitride thin films with large cubic phase content were obtained.
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