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中文摘要：
为了提高SiO2单绝缘层器件的性能，在SiO2绝缘层的表面用旋涂的方法制备一层大约50nm厚度的PMMA。实验结果表明用无机／有机双绝缘层可以有效的提高器件的性能同时降低器件的漏电流。计算出了载流子迁移率和开关电流比，基于PMMA／SiO2双绝缘层器件的载流子迁移率和开关电流比分别是4．0×10^-3cm^2／Vs和10^4。
英文摘要：
We have investigated a double layer structured gate dielectric for the organic thin films transistor（OTFT） to improve the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layers is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical pararneters such as carrier mobility and on/off ratio by field effect measurement have been calculated. OTFTs based on PMMA/SiO2 double insulator with a field-effect mobility of 4.0×10^-3 cm^2/Vs and on/off ratio of 10%4 have been obtained.
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