中文摘要：

<正>We have investigated a SiO2/SiNx/SiO2 composite insulation layer structured gate dielectric for an organic thin film transistor（OTFT） with the purpose of improving the performance of the SiO2 gate insulator. The SiO2/SiNx/SiO2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2 insulation layer device,the SiO2/SiNx/SiO2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.

英文摘要：

We have investigated a SiO2/SiNx/SiO2 composite insulation layer structured gate dielectric for an organic thin film transistor（OTFT） with the purpose of improving the performance of the SiO2 gate insulator. The SiO2/SiNx/SiO2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2 insulation layer device,the SiO2/SiNx/SiO2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.