欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
制作了以并五苯为半导体有源层材料的有机薄膜晶体管。用热氧化的方法制备了一层230nm的二氧化硅栅绝缘层并用原子力显微镜（AFM）分析了表面形貌。研究了器件的电学性能，得到的并五苯有机薄膜晶体管器件载流子迁移率为8．9×10^-3cm^2／v·s，器件的阈值电压和开关电流比分别为-8．2V和1．0×10^4。
英文摘要：
Organic thin films transistor （OTFT） based on pentacene semiconductor material is made. A230 nm SiOzlayer was prepared by thermal growth method and studied by AFM. Electrical parameters such as carrier mobility and on/off ratio by field effect measurement have been investigated. For this OTFT based on pentacene material, field-effect mobility of 8.9×10^-3 cm^2/V·s and threshold voltage of -8.2 V, as well as on/off ratio of 1.0×10^4 have been obtained.
同期刊论文项目
同项目期刊论文
期刊信息
位置：