中文摘要：

为解决功率MOSFET寄生电容劣化影响寿命的问题,在MOSFET非线性模型基础上,深入分析MOSFET寄生电容参数和开关管瞬态响应信号之间的关系,推导了各参数和瞬态响应之间的关系表达式,并用Saber仿真实验进行验证.由于栅极对MOSFET的性能影响至关重要,所以此次实验分析了和栅极相关的栅源电容Cgs和栅漏电容Cgd.结果表明,在寄生参数相同劣化程度时,栅源电容对瞬态响应的影响达到7.08％,而栅漏电容近似只有1.6％.栅源电容的劣化更大程度上影响瞬态响应,为MOSFET劣化提供了新的研究思路.

英文摘要：

The distinct effects of these parasitic capacitances under the transient response were presented by analyzing frequency response and transfer function. With the help of Saber simulation software, the research shows a conclusion that capacitor Cgs has a more distinct effect on transient response. Its affection ratio can reach up to 7.08%. By comparison, capacitor Cgd only has 1.6%. What is more, there is linear relationship between degradation of capacitance Cgs and transient response of MOSFET. Therefore, it is much easier to obtain the tendency of its degradation from traits of transient response.