中文摘要：

为了分析复杂波形脉冲注入对集成电路的损伤特点，找出不同波形参数的脉冲注入损伤效应相关性，用方波脉冲和不同模型的静电放电（ESD）对5种具有典型代表意义的集成电路器件进行注入损伤效应实验，并给出了器件的损伤电压、损伤功率、损伤能量等值。采用曲线拟合的分析法，基于实验数据建立起脉冲特性参数与器件损伤参数间的数学关系，其函数拟合精度很高，可为进一步研究器件的电磁损伤机理提供指导。实验结果表明：能量型损伤为集成电路器件损伤的一种主要形式，其损伤机理是由于在PN结上的能量积累使得温度升高而最终热烧毁。各器件的能量损伤阂值与其平均值相比，平均变化区间度处于10％～20％之间，故能量可作为这种损伤模式的主要判定参数。静电放电的损伤阈值普遍略小于方波脉冲的损伤阈值，但不同脉冲注入下器件的损伤规律类似，只有量的不同而没有质的不同。

英文摘要：

In order to study the damage mechanism of integrated circuits {ICs） caused by complicated pulses, and to find out the dependencies between impulses characteristics and damage effects, both the electrostatic discharge {ESD） pulses and rectangular pulses have been injected into the ICs. Consequently, five representative ICs were chosen as the test samples, and their failure parameters such as current, power and energy were presented. The relationship between the waveform characteristics and failure parameters was extracted in the way of curve fitting. Meanwhile, the fitted mathematic function with high accuracy was also got, which was useful to the further studies on the damage mechanism of ICs. The experimental results show that failure of the samples is mainly caused by energy, because the overheating of PN junction caused by injected pulses makes the ICs damaged permanently. The energy values of pulses damaging test samples are almost constant with varued pulse widths or amplitudes, and the normalized deviation is about 10%～20%. As a result, the energy of impulse can be chosen as the failure criterion to evaluate this kind of integrated circuits. It is also reported that the damage threshold of ICs caused by ESD is lower than the value caused by rectangular pulses. Though the injected pulse is different, the essential damage rule is similar.