中文摘要：

为了发掘不同特征频率的高频硅双极晶体管在静电放电（ESD）机器模型（MM）作用下敏感特性的相关规律，选取了12种典型的高频硅双极晶体管进行静电放电效应试验。试验结果表明：由于发射极E基极B之间的PN结（EB结）基区宽度比集电极C和基极B之间的PN结（CB结）窄，因而反偏注入MMESD时，高频硅硅双极晶体管（BJT）的ESD最敏感端对是EB反偏结；当特征频率fT=600MHz时，失效电压最大，并且随着fT的升高或降低，器件的失效电压逐渐减小：随着注入电压的升高，当fT〈600MHz时，共发射极电流增益h_FE突变至失效，当fT〉600MHz时，hFE渐变至失效。该研究结果对于分析高频硅BJT在ESD作用下的敏感特性具有指导意义。

英文摘要：

In order to get a law of electrostatic discharge （ESD） sensitivity of high-frequency silicon bipolar transistors （BJT） about different characteristic frequency 0cx）, 12 kinds of typical high-frequency silicon BJTs were adopted and in- jected under the action of ESD machine model （MM）. Based on the test results, 3 conclusions can be drawn about ESD sensitivity and fT. Firstly, because the base width of the CB reverse-biased junction is wider than that of the EB re- verse-biased junction when the MM ESD is injected reversely to the pin pairs, the EB reverse-biased junction is the most sensitive pin pair of all tested high-frequency silicon BJTs. Secondly, when fT=600 MHz, the failure voltage is highest owing to the widest base width; with fT rising or reducing, the failure voltage will decrease due to the narrowing base width. Thirdly, whenfx〈600 MHz, the common-emitter current gain（heE） fails as the injected voltage rises; whenfT〉600 MHz, the change rule of hvE is reducing gradually with the injected voltage rising. As a result, these conclusions are sig- nificant for us to study the law between ESD sensitivity of high-frequency silicon and fT.