中文摘要：

本文报道了利用混合物理化学气相沉积方法（HPCVD）在SiC衬底上制备出约150 nm厚,结构均匀的MgB2薄膜.由R-T曲线知道样品TC（0）高达40.1K.由M-T曲线知道其TC=40.4K,且曲线转变十分陡峭.X射线衍射分析表明薄膜具有较好的C轴取向,没有氧污染,却存在Mg的杂峰.由M-H曲线,利用毕恩模型计算得到了5 K零场条件下JC（0T,5K）=2.7×106A/cm2,Hc2=19.5 T.这些结果表明过量的Mg对MgB2薄膜的转变温度以及有些性质有较大的影响.

英文摘要：

MgB2 thin films with thickness-150 nm have been synthesized on SiC substrate by using hybrid physical-chemical vapor deposition（HPCVD）.XRD analysis shows Mg peaks exist in the sample.M-T measurement indicates that the onset transition temperature TC（onset） is up to 40.4 K.In addition,the critical current density -JC（5 K,0 T） reaches 2.7×106 A/cm2,with the critical field -HC2（0） up to19.5 T.These results indicate that the excess of Mg has a great effect on the properties of MgB2 thin film.