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中文摘要：
本文报道了基于混合物理化学气相沉积法（Hybrid physical-chemical vapordeposition,简称为HPCVD）,以硅烷热解出的Si原子作硅源,在SiC衬底上原位生长了一系列硅掺杂MgB_2超导薄膜样品.样品中最大硅掺杂量是9%.与纯净的MgB_2薄膜相比较,掺杂样品的超导临界转变温度T_c没有大幅下降,超导临界电流J_c得到了一定提升.在温度为5K,外加垂直磁场为3T的条件下,样品的临界电流密度最大达到2.7×10~5Acm~（-2）.同时上临界场H_（c2）在超导转变温度附近对于温度的变化曲线斜率—dH/dT也有一定的提高.
英文摘要：
We report the synthesis and characterization of silicon-doped MgB_2 films fabricated by hybrid physicalchemical vapor deposition（HPCVD） using silane as the doping source.Various amounts of Si up to 9%were added into MgB_2 thin films,which are in situ epitaxial growth on SiC.Compared with the undoped film,the superconducting transition temperature（T_c） of the doped film does not change significantly,however its magnetic critical current density（J_c） has been increased.J_c of the film with 5.0 at%is up to 2.7×10~5 Acm~（-2） for 3T perpendicular field. And the slope of the upper critical field（H_（c2）） curve of the doped film is slightly higher than that for the undoped MgB_2 film.
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