中文摘要：

采用扫描电子显微镜和四探针技术研究了空穴掺杂系列样品Sr2-xKxFeMoO6（0≤x≤0.04）的输运性质。结果表明,空穴掺杂提高了该系列样品的结晶度,使颗粒均匀,空洞变少,晶粒尺寸由未掺杂时的约为2μm变化至掺杂量x=0.04时的约为1μm。四探针输运结果表明该系列样品的金属-绝缘体转变温度（TS-M）由未掺杂时的170K变化至掺杂量x=0.04时的72K。晶粒尺寸、阳离子有序、载流子浓度是影响Sr2-xKxFeMoO6输运性质的重要因素。

英文摘要：

Polycrystalline samples of Sr2-xKxFeMoO6（x=0.00,0.01,0.02,0.03,0.04） were prepared by standard solid-state reaction.By measuring the electrical resistivity,we were able to identify the semiconductor-metal transition temperature（TS-M）,which was found to decrease from 170 to 72K with increasing x.The scanning electron microscope（SEM） result showed that the hole doping remarkably decreased the grain size,enhancing the degree of crystallinity.All these observations can be understood based on the interplay among size change in grain boundary,the anti-site defect concentration and the hole doping.