中文摘要：

采用金属催化化学腐蚀法在p型（100）硅基底上制备了硅纳米阵列,然后用碱溶液对纳米线阵列进行修饰。分别研究了碱液修饰对硅纳米线阵列形貌、光电性质的影响。研究表明：与绒面及纳米线阵列相比,碱修饰30 s硅纳米线阵列的表面分散均匀,反射率降低;光谱响应度显著提高,并且出现最大量子效率对应波长红移现象。最后,详细讨论了碱液修饰硅纳米线阵列电池对光谱响应的影响机制。

英文摘要：

The vertically aligned silicon nanowire（SiNW） arrays have been fabricated by using an electroless etching method,and then the nanowire arrays were modified by dipped the SiNWs in alkali solution.The effect of alkali solution on the morphology and photoelectric property of SiNWs were studied.The results showed that the spectral response of the modified SiNW arrays cell was obviously improved compared to the bunched SiNWs cell and textured cell.The phenomenon of wavelength red shift for maximum quantum efficiency was discovered,which confirmed that the photoelectric performance can be significantly improved at long wave band by alkali solution modified,but low spectral response at short wave period showed that charge carriers were seriously recombined at silicon nanowires near surface.When the alkali solution modified time increase to 60 s,the photoelectric response was weakened.In addition,the effect mechanism of alkali solution modify on the spectral response of SiNWs cell was tentatively analyzed and interpretation in detail.