采用快速等离子烧结法(SPS)制得纯相BiFeO3靶材,利用脉冲激光沉积(PLD)法将其沉积在Si(100)衬底上,制得BiFeO3薄膜。通过调节各种工艺参数,在沉积温度650℃,氧压2Pa,靶基距5cm,脉冲激光频率7Hz、激光能量350mJ条件下获得了高择优取向、高结晶度的BiFeO3薄膜。在此工艺条件下,又制备了不同厚度的BiFeO3薄膜。用XRD、SEM等手段对薄膜相和形貌进行了表征。结果表明,制备的薄膜有较高的形貌质量,薄膜的铁电、铁磁性能呈现出与厚度的强相关性;其中300nm厚的薄膜质量最好。
Pure phase BiFeO3 target was prepared by spark plasma sintering (SPS) technique. BiFeO3 films were deposited on substrate of Si (100) by pulsed laser deposition (PLD) method. By adiusting technological parameters, BiFeO3 films of high preferred orientation and high crystallinity were prepared at 650℃, O2 pressure of 2Pa, target-substrate distance of 5cm and laser frequency of 7Hz and energy of 350mJ. A series of BiFeO3 films of different thickness were obtained under such conditions. The phase and morphology of films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results show that the morphology of films had high quality, there were strong correlations between the ferroelectric and ferromagnetic properties of films and the thickness, and the film with thickness of 300nm had the optimal property.