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中文摘要：
为了突破传统的机电转换效应的宏观物理局限，为更高灵敏度、更低功耗的微／纳机电压力传感器的设计提供理论、工艺及实验依据，首次设计并利用微机械控制孔技术加工制作了基于AlAs／InxGa1-xAs／GaAs共振隧穿二极管（RTD）的GaAs基薄膜压力传感器，实现了RTD工艺与微机械加工技术的工艺集成．测试结果表明：该压力传感器的线性灵敏度达到0．1mV／kPa．
英文摘要：
In order to break through the macroscopically physical limitation of the traditional mechanical-electrical effect, provide the theory, process and experimental references for the design of higher sensitivity, lower power consumption pressure sensor, a GaAs Pressure sensor based on resonant tunneling diodes （AlAs/InxGa1-xAs/GaAs RTD） is designed and processed by the control hole technology firstly, and the process integration of RTD and micro-mechanical technology is implemented. The test results show that the linear sensitivity is up to 0.1 mV/kPa.
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