提出了一种新型的基于AlAs/InxGa1-xAs/GaAs共振隧穿纳米薄膜结构的压阻式加速度计结构,运用MATLAB软件对敏感结构参数进行了计算,并利用ANSYS软件对加速度计结构进行了静态和模态分析,首次采用空气桥和控制孔加工工艺对共振隧穿二极管和悬臂梁-质量块结构进行了加工,并对加工出来的加速度计结构进行了频响特性实验。
A novel piezoresistive accelerometer based on the A1As/InxGal-xAs/GaAs resonant tunneling thin films has been introduced. The sensitive structure parameters were calculated and analyzed by MAT- LAB. The static and modal characteristics were simulated by ANSYS. The resonant tunneling diode and cantilever-proof mass structure have been fabricated by air-bridge and control hole technique. The dynamic experiment shows that the accelerometer has a good frequency response.