设计并利用控制孔技术加工了GaAs基微结构和基于该微结构的共振隧穿薄膜,并通过实验研究了微结构中共振隧穿薄膜的介观压阻效应,试验结果表明其介观压阻灵敏度比硅的最大压阻灵敏度高一个数量级。
The GaAs micro-structure and the resonant tunneling film based on the micro-structure were designed and processed by control hole technology. And the meso-piezoresistive effects of the film were studied through experiments, more than one order higher piezoresistive sensitivity than that of silicon is demonstrated.