中文摘要：

为了提高硅片抛光效率，改善抛光表面质量，采用电化学交流阻抗谱法实验研究了极化电势对硅片表面钝化作用的影响规律，结合摩擦电化学实验探讨了极化电势对硅片表面摩擦系数及材料去除特性的影响。结果表明，在碱性CeO2抛光液中，对硅片施加1 V阳极极化电势能够促进其表面形成抑制腐蚀的钝化层，极化电势过高会破坏表面钝化层，过低则抑制钝化层形成。良好的硅片表面钝化层能够有效增大其摩擦系数，提高摩擦电化学实验过程中的材料去除率。

英文摘要：

To increase polishing efficiency and improve surface quality of silicon, electrochemical measurements were used to study the influence of polarization potential on passivation of silicon wafer, based on which tribo-electrochemical tests were done to investigate the effect of polarization potential on friction and material removal. Results show that the passivation film with better corrosion inhibition effect can be obtained under anode polarization potential of 1 V in alkaline CeO2 polishing liquid. A higher polarization would destroy the passivation film, while a lower polarization would suppress the formation of it. Moreover, the passivation film on silicon wafer can increase surface friction coefficient as well as material removal rate.