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Impact of circuit placement on single event transient in 65nm bulk CMOS technology
  • 期刊名称：IEEE Transaction on Nuclear Science
  • 时间：2012.12.12
  • 页码：2772-2777
  • 相关项目：吉赫兹锁相环单粒子瞬变效应建模与加固技术研究
作者： He Yibai|Chen Shuming|Chen Jianjun|Chi Yaqing|Liu Biwei|Qin Junrui|
同期刊论文项目
吉赫兹锁相环单粒子瞬变效应建模与加固技术研究
期刊论文 28 会议论文 19 专利 1
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