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中文摘要：
本文采用CVD法，以甩涂在衬底硅片上的Ga2O3薄膜和NH3作为原料，成功制备出大量GaN纳米线。采用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、能量色散谱仪（EDS）和高分辨透射电镜（HRTEM）对样品进行了成分和结构分析，并简单讨论了其生长机理。结果表明：产物为平直光滑的GaN纳米线，其直径为30nm-50nm。长度可达几十微米，纳米线为高质量的六方纤锌矿GaN晶体。
英文摘要：
Large quantity GaN nanowires were synthesized via direct reaction of the films of Ga2O3 which were coated on the Si substrate with flowing ammonia. X-ray diffraction （XRD）, field emission scanning electron microscope （FESEM） equipped with an energy dispersive spec- trometer （EDS） and high resolution transmission electron microscope （HRTEM） were used to characterize the samples. The results show that： the products were straight and smooth GaN nanowires. Their diameters were in the range of 30nm - 50nm, lengths can be up to several microns. High quality GaN nanowires are obtained with hexagonal structure.
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