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中文摘要：
摘要采用传统固相合成法制备了铋层状结构CaBi2Nb2O9压电陶瓷，研究了烧结温度对样品相结构、微观形貌、密度和介电、铁电性能的影响。采用X射线衍射衍射仪、电子扫描电镜、拉曼光谱、介电温谱以及电滞回线对制备陶瓷样品进行表征分析和性能测试。结果表明：所有陶瓷样品的相组成均为纯铋层状结构，晶粒呈棒状，各向异性明显，随着烧结温度的升高，晶粒逐渐长大，陶瓷密度先变大后变小。固相法制备的CaBi2Nb2O9压电陶瓷的最佳烧结温度为1150℃，介电温谱显示CaBi2Nb209陶瓷的居里温度为943℃。
英文摘要：
Abstract： Bismuth layer- structured CaBi2Nb209 piezoelectric ceramics are prepared by solid state synthetize process. The effects of sintering temperature on the microstructure, morphology, density and dielectric properties of the composite eeramies are investigated. The phase composition, strueture and properties for all ceramics are inves- tigated by X- ray diffraction （XRD） Raman spectra analysis, scanning electron microscopy （SEM） and the tem- perature dependence of the relative dielectric permittivity. The results show that the pure bismuth layer -structured is obtained for all the specimens. The grains are of highly anisotropic plate - like shape, the grain size is increased is obtained for all the specimens. The grains are of highly anisotropic plate - like shape, the grain size is increased with the raising of the sintering temperature, and the density of ceramics gradually is first increased and then de-creased. The optimum sintering temperature is 1 150 ℃, and the relative dielectric permittivity of CaBi2Nb209 ce- ramic samples shows that the Curie temperature （Tc） is about 943℃.
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