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An energy-efficient and highly linear switching capacitor procedure for SAR ADCs
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN4[电子电信—微电子学与固体电子学] TN958[电子电信—信号与信息处理;电子电信—信息与通信工程]
  • 作者机构:[1]School ofMicroelectronics, Xidian University, Xi'an 710071, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044, 61376033), and the National High-Tech Program of China (Nos. 2012AA012302, 2013AA014103).
中文摘要:

An energy-efficient and highly linear capacitor switching procedure for successive approximation register(SAR) ADCs is presented.The proposed switching procedure achieves 37%less switching energy when compared to the well-known VCM-based switching scheme.Moreover,the proposed method shows better linearity than the VCM-based one.The proposed switching procedure is applied to a 10-bit 1.0 V 300 kS/s SAR ADC implemented in 0.18 μm standard CMOS.The measured results show the SAR ADC achieves an SNDR of 55.48 dB,SFDR of66.98 dB,and consumes 2.13 μW at a 1.0 V power supply,resulting in a figure-of-merit of 14.66 fJ/conversionstep.The measured peak DNL and INL are 0.52/-0.47 LSB and 0.72/-0.79 LSB,respectively,and the peak INL is observed at 1/4VFS and 3/4VFS.the same as the static nonlinearity model.

英文摘要:

An energy-efficient and highly linear capacitor switching procedure for successive approximation regis- ter (SAR) ADCs is presented. The proposed switching procedure achieves 37% less switching energy when compared to the well-known VcM-based switching scheme. Moreover, the proposed method shows better linearity than the VcM-based one. The proposed switching procedure is applied to a 10-bit 1.0 V 300 kS/s SAR ADC implemented in 0.18μm standard CMOS. The measured results show the SAR ADC achieves an SNDR of 55.48 dB, SFDR of 66.98 dB, and consumes 2.13 μW at a 1.0 V power supply, resulting in a figure-of-merit of 14.66 fJ/conversion- step. The measured peak DNL and 1NL are 0.52/-0.47 LSB and 0.72/-0.79 LSB, respectively, and the peak INL 1 is observed at 4^-1 VFS and 4^-3 VFS, the same as the static nonlinearity model.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754