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中文摘要：
在真空环境下利用飞秒激光制备的“黑硅”材料，其形貌与SF6气氛中制备的“黑硅”材料有着很大的区别。为了研究这种真空环境下制备的微构造硅的相关光学特性，通过改变入射脉冲能量研究其峰值变化以及吸收特性，发现当峰值达到一定高度时其对200~2500 nm波段的光波有95%左右的吸收效率，这与SF6气氛中制备的微构造硅的吸收效率不相上下。最后对两种环境下制备的“黑硅”样品进行退火处理，发现真空环境下制备的“黑硅”材料比SF6气氛中制备的“黑硅”样品具有更好的耐退火性。这些结果对于利用真空环境下制备的微构造硅制作红外传感器具有重要意义。
英文摘要：
It is found that the black silicon fabricated by femtosecond laser in the vacuum is different from that fabricated in the gas atmosphere of SF6. To study the related optical properties of this micro-structured silicon fabricated in the vacuum, the changes of its peak height and absorptance were studied by changing the energy of laser pulse. It is found that the microstructures fabricated in the vacuum can also reach the absorptance of ~95% in the spectral range of 200-2 500 nm as that fabricated in the gas atmosphere of SF6. Finally, by annealing the black silicon fabricated in two different environments, the black silicon fabricated in the vacuum has better annealing resistance. These results are very significative for the fabrication of infrared sensor.
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